Green Product STU12L01 Ver 1.2 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 Package. ID 12A R DS(ON) (m Ω) Max 140 @ VGS=10V 245 @ VGS=4.5V G S STU SERIES TO - 252AA( D - PAK ) ABSOLUTE MAX.
Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 Package. ID 12A R DS(ON) (m Ω) Max 140 @ VGS=10V 245 @ VGS=4.5V G S STU SERIES TO - 252AA( D - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TC=25°C TC=70°C 12 9.6 35 25 TC=25°C TC=70°C 50 32 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACT.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STU1224N |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
2 | STU1225PL |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor | |
3 | STU12N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STU12N65M5 |
ST Microelectronics |
N-Channel Power MOSFET | |
5 | STU12N65M5 |
INCHANGE |
N-Channel MOSFET | |
6 | STU100N3LF3 |
ST Microelectronics |
N-channel Power MOSFET | |
7 | STU102S |
SamHop Microelectronics |
N-Channel MOSFET | |
8 | STU1030PL |
SamHop Microelectronics |
P-Channel Enhancement Mode MOSFET | |
9 | STU10L01 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
10 | STU10N10 |
SamHop Microelectronics |
N-Channel MOSFET | |
11 | STU10N20 |
SamHop Microelectronics |
N-Channel MOSFET | |
12 | STU10N25 |
SamHop Microelectronics |
N-Channel MOSFET |