STU1224N - SamHop Microelectronics

STU1224N N-Channel Enhancement Mode Field Effect Transistor

S amHop Microelectronics C orp. N-C hannel S Eh nhancement Mode Field E ffect Trans is tor t e e 4U m o .c S T U/D1224N Dec 20,2004 a t a P R ODUC T S UMMAR Y D . V w I R w w DS S D F E AT UR E S DS (ON) ( m £[ ) Max S uper high dense cell design for low R DS (ON ). 80 @ V G S = 4.5V R ugged and reliable. 24V 12A 130 @ V G S = 2.5V TO-252 and .

Features

ion-to-Ambient 1 R JC R JA w w w .D at 3 h S a t e e W U 4 . m o c C C /W C /W 50 S T U/D1224N E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 18V, V GS = 0V V GS = 12V, V DS = 0V V DS = V GS , ID = 250uA V GS =4.5V, ID = 6.0A V GS =2.5V, ID = 5.2A V DS = 5V, V GS = 4.5V V DS = 10V, ID = 6.0A Min Typ C Max Unit 24 1 100 0.7 .