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STB28NM60ND |
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| Part Number | STB28NM60ND |
| Manufacturer | INCHANGE |
| Description | ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Cu... |
| Features |
·Drain Current –ID=23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 150mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature ... |
| Document |
 STB28NM60ND Data Sheet
PDF 264.80KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STB28NM60ND |
STMicroelectronics |
N-Channel MOSFET |
|
| 2 | STB28NM50N |
ST Microelectronics |
N-Channel Power MOSFET |
|
| 3 | STB28NM50N |
INCHANGE |
N-Channel MOSFET |
|
| 4 | STB28N15 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 5 | STB28N60DM2 |
STMicroelectronics |
N-channel Power MOSFET |
|