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IRF5210S |
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| Part Number | IRF5210S |
| Manufacturer | INCHANGE |
| Description | isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -24A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variati... |
| Features |
·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -24A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -40 PD Total Dissipation @TC=25℃ 200 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMET... |
| Document |
 IRF5210S Data Sheet
PDF 248.02KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF5210 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF5210 |
INCHANGE |
P-Channel MOSFET |
|
| 3 | IRF5210L |
International Rectifier |
Power MOSFET |
|
| 4 | IRF5210L |
INCHANGE |
P-Channel MOSFET |
|
| 5 | IRF5210LPBF |
International Rectifier |
Power MOSFET |
|