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IPI04CN10N |
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| Part Number | IPI04CN10N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor NCHANGE Semicon Iductor IPI04CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimu... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤3.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 100 A IDM Drain Current-Single Pulsed 400 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperatur... |
| Document |
 IPI04CN10N Data Sheet
PDF 256.67KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPI04CN10N |
Infineon |
Power-Transistor |
|
| 2 | IPI04CN10NG |
Infineon |
Power-Transistor |
|
| 3 | IPI040N06N3 |
Infineon |
Power Transistor |
|
| 4 | IPI040N06N3G |
Infineon Technologies AG |
Power-Transistor |
|
| 5 | IPI041N12N3 |
Infineon |
Power Transistor |
|