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SPA11N60C3E8185 |
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| Part Number | SPA11N60C3E8185 |
| Manufacturer | INCHANGE |
| Description | ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 33 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -... |
| Document |
 SPA11N60C3E8185 Data Sheet
PDF 241.72KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPA11N60C3E8185 |
Infineon Technologies |
Power Transistor |
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| 2 | SPA11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 3 | SPA11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPA11N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 5 | SPA11N60CFD |
Infineon Technologies |
CoolMOS Power Transistor |
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