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TK30E06N1 |
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| Part Number | TK30E06N1 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK30E06N1，ITK30E06N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤15.0mΩ. (VGS = 10 V) ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ... |
| Features |
·Low drain-source on-resistance: RDS(on) ≤15.0mΩ. (VGS = 10 V) ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.2mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 95 PD Total Dissipation @TC=25℃ 53 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W... |
| Document |
 TK30E06N1 Data Sheet
PDF 241.84KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK30E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | TK30A06J3A |
Toshiba Semiconductor |
MOSFET |
|
| 3 | TK30A06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | TK30A06N1 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | TK30J25D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|