TTD1415B - Inchange

TTD1415B Silicon NPN Power Transistor

·High DC Current Gain- : hFE = 2000(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A ·Complement to Type TTB1020B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃).

Features

ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A, IB= 6mA VBE(sat) Base-emitter saturation voltage IC= 6A, IB= 6mA ICBO Collector Cutoff Current VCB= 120V, IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 3A; VCE= 3V hFE-2 DC Current Gain IC= 6A; VCE= 3V TTD1415B MIN MAX UNIT 100 V 1.5 V 2.0 V 2 uA 0.75 3 mA 2000 15000 1000 NOTICE： ISC reserves the rights to make changes of the c.