TTD1410 - INCHANGE

TTD1410 NPN Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Igniter applications ·High voltage switching applications ABSOLUTE MAXI.

Features

herwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; L= 40mH 250 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.5 V ICBO Collector Cutoff Current VCB= 300V; IE= 0 500 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 500 μA hFE -1 DC Current Gain IC= 2A ; VCE= 2V 2000 hFE -2 DC Current Gain IC= 4A ; VCE= 2V 200 COB Output Capacitance IE= 0 ; VCB= 10V; ftest=1MHz 35 pF Switching times ton Turn-on Time 1.0 μs .