2SB1227 INCHANGE PNP Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

2SB1227

INCHANGE
2SB1227
2SB1227 2SB1227
zoom Click to view a larger image
Part Number 2SB1227
Manufacturer INCHANGE
Description ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -2.5A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SD1829 ·Minimum Lot-to-Lot variations for robust device performance and reli...
Features PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2.5A; IB= -5mA VBE(sat) Base-Emitter Saturation Voltage IC= -2.5A; IB= -5mA ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -2.5A; VCE= -3V fT Current-Gain—Bandwidth Product IC= -2.5A; VCE= -5V 2SB1227 MIN TYP. MAX UNIT -100 V -110 V -1.5 V -2.0 V -100 μA -3.0 mA 1500 20 MHz NOTICE: ISC reserves the rig...

Document Datasheet 2SB1227 Data Sheet
PDF 207.02KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SB1220
Panasonic Semiconductor
Silicon PNP epitaxial planer type Transistor Datasheet
2 2SB1220
Kexin
Silicon PNP epitaxial planar type Transistor Datasheet
3 2SB1221
Panasonic Semiconductor
Silicon PNP epitaxial planer type Transistor Datasheet
4 2SB1221
Panasonic Semiconductor
Silicon NPN Transistor Datasheet
5 2SB1223
Sanyo Semicon Device
PNP/NPN Transistors Datasheet
More datasheet from INCHANGE



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact