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SMD Type Silicon PNP Epitaxial Planar Type 2SB1220 Transistors Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction tempera.
High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating -150 -150 -5 -100 -50 150 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturati.
2SB1220 - Panasonic Semiconductor
Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1221 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 2 | 2SB1221 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SB1223 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 4 | 2SB1223 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SB1223 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB1224 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 7 | 2SB1225 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 8 | 2SB1225 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SB1225 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB1226 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 11 | 2SB1226 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SB1226 |
INCHANGE |
PNP Transistor |
|