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Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 5.0±0.2 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collecto.
0.45
–0.1
+0.15
2.3±0.2
1:Emitter 2:Collector 3:Base TO
–92NL Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO VCEO VEBO hFE fT Cob
*
Conditions VCB =
–12V, IE = 0 IC =
–100µA, IB = 0 IE =
–1µA, IC = 0 VCE =
–10V, IC =
–5mA IC =
–50mA, IB =
–5mA VCB =
–10V, IE = 10mA, f = 200MHz VCB =
–10V, IE = 0, f = 1MHz
min
typ
max
–2
Unit µA V V
–200
–5 60 220
–1.5 50 80 5 10
VC.
2SB1221 - Panasonic Semiconductor
Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 5.0±0..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1220 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 2 | 2SB1220 |
Kexin |
Silicon PNP epitaxial planar type Transistor |
|
| 3 | 2SB1223 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 4 | 2SB1223 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SB1223 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB1224 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 7 | 2SB1225 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 8 | 2SB1225 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SB1225 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB1226 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 11 | 2SB1226 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SB1226 |
INCHANGE |
PNP Transistor |
|