TIC126N |
Part Number | TIC126N |
Manufacturer | BOURNS |
Description | TIC126 SERIES SILICON CONTROLLED RECTIFIERS 12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mA This series is obsolete and n... |
Features |
e temperature range
Storage temperature range
VDRM
VRRM
IT(RMS) IT(AV) ITM IGM PGM PG(AV)
TC Tstg
Lead temperature 1.6 mm from case for 10 seconds
TL
VALUE 400 600 700 800 400 600 700 800 12
7.5
100 3 5 1
-40 to +110 -40 to +125
230
UNIT
V
V
A A A A W W °C °C °C
NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C. 2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate linearly to zero at 110°C. 3. This value applies for one 50 Hz half-sine-wav... |
Document |
TIC126N Data Sheet
PDF 159.00KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TIC126 |
Power Innovations Limited |
SILICON CONTROLLED RECTIFIERS | |
2 | TIC126A |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR | |
3 | TIC126B |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR | |
4 | TIC126C |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR | |
5 | TIC126D |
Inchange Semiconductor |
Thyristors |