TIC126C - Comset Semiconductors

TIC126C P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR

SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value http://www.DataSheet4U.net/ Symb.

Features

C D E 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 12 7.5 100 3 5 1 -40 to +110 -40 to +125 230 30/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S THERMAL CHARACTERISTICS Symbol tgt tq R∂JC R∂JA Ratings Gate-controlled VAA = 30 V, RL = 6 Ω Turn-on time RGK(eff) = 100 Ω, Vin = 20 V Circuit-communicated VAA = 30 V, RL = 6 Ω Turn-off time IRM ≈ 10 A Junction to case thermal resistance Junction to free air thermal resistance Value 0.8 Unit µs 11 ≤ 2.4 ≤ 62.5 °C/W ELECTRICAL C.