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TIC126 SERIES SILICON CONTROLLED RECTIFIERS Copyright © 2000, Power Innovations Limited, UK APRIL 1971 - REVISED JUNE 2000 G G G G G 12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mA K A G 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC1A.
e range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL VRRM VDRM SYMBOL VALUE 400 600 700 800 400 600 700 800 12 7.5 100 3 5 1 -40 to +110 -40 to +125 230 A A A A W W °C °C °C V V UNIT NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C. 2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate linearly to zero at 110°C. 3. This value applies for one 50 Hz half-sine-wave when the .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TIC12400-Q1 |
ETCTI |
24-Input Multiple Switch Detection Interface |
|
| 2 | TIC126A |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 3 | TIC126B |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 4 | TIC126C |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 5 | TIC126D |
Inchange Semiconductor |
Thyristors |
|
| 6 | TIC126D |
BOURNS |
SILICON CONTROLLED RECTIFIER |
|
| 7 | TIC126D |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 8 | TIC126D |
Qidong Jilai |
12A SCR |
|
| 9 | TIC126E |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 10 | TIC126M |
Inchange Semiconductor |
Thyristors |
|
| 11 | TIC126M |
BOURNS |
SILICON CONTROLLED RECTIFIER |
|
| 12 | TIC126M |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|