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TTD1415 |
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| Part Number | TTD1415 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Minimum Lot-t... |
| Features |
ed
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 6mA
2.5
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
mA
hFE -1
DC Current Gain
IC= 3A ; VCE= 3V
2000
15000
hFE -2
DC Current Gain
IC= 7A ; VCE= 3V
1000
Switching times
ton
Turn-on Time
tstg
S... |
| Document |
 TTD1415 Data Sheet
PDF 186.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TTD1410 |
INCHANGE |
NPN Transistor |
|
| 2 | TTD1415B |
Toshiba |
Silicon NPN Transistor |
|
| 3 | TTD1415B |
Inchange |
Silicon NPN Power Transistor |
|
| 4 | TTD1409B |
INCHANGE |
NPN Transistor |
|
| 5 | TTD120N03AT |
Unigroup |
30V N-Channel MOSFET |
|