3DD100E INCHANGE NPN Transistor Datasheet, en stock, prix

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3DD100E

INCHANGE
3DD100E
3DD100E 3DD100E
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Part Number 3DD100E
Manufacturer INCHANGE
Description ·With TO-66 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO...
Features ACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0 BVCBO Collector-Base Sustaining Voltage IC= 1mA; IE= 0 BVEBO Emitter-Base Sustaining Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICEO Collector Cutoff Current VCE= 50V; IB= 0 ICBO Collector Cutoff Current VCB= 50V; IE= 0 hFE DC Current Gain IC= 0.5A; VCE= 5V MIN MAX UNIT 300 V 350 V 4 V 1.5 V 0.2 mA 0.5 mA 40 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet...

Document Datasheet 3DD100E Data Sheet
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