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2SD1163 |
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| Part Number | 2SD1163 |
| Manufacturer | INCHANGE |
| Description | ·Collector Current: IC= 7A ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= 120V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for T... |
| Features |
own Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 300V ; IE= 0
hFE
DC Current Gain
IC= 5A ; VCE= 5V
tf
Fall Time
ICP= 3.5A; IB1= 0.45A
2SD1163
MIN TYP. MAX UNIT
120
V
6
V
2.0
V
1.2
V
5
mA
25
0.5 μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are inten... |
| Document |
 2SD1163 Data Sheet
PDF 208.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1160 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SD1162 |
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor |
|
| 3 | 2SD1163 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 4 | 2SD1163 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD1163 |
Renesas |
Silicon NPN Transistor |
|