MDD1051RH |
Part Number | MDD1051RH |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MDD1051RH ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimu... |
Features |
·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGSS ID IDM PD Tch Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed Total Dissipation @TC=25℃ TC=100℃ Max. Operating Junction Temperature ±20 28 18 110 70 28 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMA... |
Document |
MDD1051RH Data Sheet
PDF 203.81KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MDD1051 |
MagnaChip |
Single N-channel MOSFET | |
2 | MDD1080-18N7 |
IXYS |
Diode Modules | |
3 | MDD1080-24N7 |
IXYS |
Diode Modules | |
4 | MDD1080-28N7 |
IXYS |
Diode Modules | |
5 | MDD10N074RH |
MagnaChip |
N-channel MOSFET |