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IXTP80N12T2 |
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| Part Number | IXTP80N12T2 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain-Source On-Resistance: RDS(on)<17mΩ ·With TO-220 packaging ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device... |
| Features |
·Drain-Source On-Resistance: RDS(on)<17mΩ ·With TO-220 packaging ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications INCHANGE Semiconductor IXTP80N12T2 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 10.4 6.6 80 PD Total Dissipation 325 Tj Operating Junction Temperature -55~175 Tstg ... |
| Document |
 IXTP80N12T2 Data Sheet
PDF 202.34KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXTP80N12T2 |
IXYS |
Power MOSFET |
|
| 2 | IXTP80N10T |
IXYS |
Power MOSFET |
|
| 3 | IXTP80N10T |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTP80N075L2 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTP80N075L2 |
IXYS |
Power MOSFET |
|