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EPC2001C |
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| Part Number | EPC2001C |
| Manufacturer | EPC |
| Description | eGaN® FET DATASHEET EPC2001C – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 7 mΩ ID , 36 A D G S EPC2001C EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron m... |
| Features |
1
RθJB Thermal Resistance, Junction-to-Board
2
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
54
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
PARAMETER
Static Characteristics (TJ = 25°C unless otherwise stated) TEST CONDITIONS
BVDSS IDSS
Drain-to-Source Voltage Drain-Source Leakage
VGS = 0 V, ID = 300 μA VGS = 0 V, VDS = 80 V
Gate-to-Source Forward Leakage IGSS
Gate-to-Source Revers... |
| Document |
 EPC2001C Data Sheet
PDF 1.03MB |
| Distributor | Stock | Price | Buy |
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