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MRF6V2300NBR1 |
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| Part Number | MRF6V2300NBR1 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with freque... |
| Features |
• Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6V2300N Rev. 5, 4/2010 MRF6V2300NR1 MRF6V2300NBR1 10--600 MHz, 300 W, 50 V LATERAL N--CHANNEL SINGLE--ENDED BROADBAND RF POWER MOSFETs CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC MRF6V2300NR1 CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC MRF6V2300NBR1 PARTS ARE SINGLE--ENDED Table 1. Maximum Ratings Rating Dr... |
| Document |
 MRF6V2300NBR1 Data Sheet
PDF 1.22MB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF6V2300NB |
Motorola Semiconductor |
RF Power Field Effect Transistor |
|
| 2 | MRF6V2300N |
Motorola Semiconductor |
RF Power Field Effect Transistor |
|
| 3 | MRF6V2300NR1 |
NXP |
RF Power FET |
|
| 4 | MRF6V2010GN |
NXP |
RF Power FET |
|
| 5 | MRF6V2010N |
NXP |
RF Power FET |
|