TIM1414-18L-252 |
Part Number | TIM1414-18L-252 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | MICROWAVE POWER GaAs FET TIM1414-18L-252 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB= 6.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION... |
Features |
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 42.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN
G1dB= 6.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.) at Pout= 36dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
SYMBOL
CONDITIONS
P1dB G1dB IDS1
VDS= 9V IDSset= 4.4A f= 13.75 to 14.5GHz
UNIT dBm dB
A
Power Added Efficiency 3rd Order Intermodulation Distortion
Drain Current
Channel Temperature Rise
... |
Document |
TIM1414-18L-252 Data Sheet
PDF 346.63KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TIM1414-18L |
Toshiba |
Microwave Power GaAs FET | |
2 | TIM1414-10A |
Toshiba |
Microwave Power GAAS Fet | |
3 | TIM1414-10A-252 |
Toshiba |
Microwave Power GAAS Fet | |
4 | TIM1414-10LA |
Toshiba |
Microwave Power GaAs FET | |
5 | TIM1414-10LA-252 |
Toshiba |
Microwave Power GaAs FET |