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Features
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J = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
V(BR)DSS VGS(th) IGSS
VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±30V
600 2 2.8 4 ±100
Gate Voltage Drain Current
Drain-Source On-State Resistance1
IDSS RDS(ON)
VDS = 600V, VGS = 0V, TC = 25 °C VDS = 480V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 6A
1 10
518 670
Forward Transconductance1
gfs
VDS = 10V, ID = 6A
15
DYNAMIC
Input Capacitance
Ciss
2023
Output Capacitance
Coss
VGS = 0V, VDS = 25V, ...
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P1260ETF Data Sheet
