P1260AT - UNIKC

P1260AT N-Channel MOSFET

P1260AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 0.65Ω @VGS = 10V 12A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1, 2 Avalanche Current3 A.

Features

ted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 600 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 2.5 Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V, TC = 25 °C VDS = 600V, VGS = 0V , TC = 100 °C 4.5 ±100 25 250 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 6A 0.475 0.65 Forward Transconductance1 gfs VDS = 40V, ID = 6A 16 DYNAMIC Input Capacitance Ciss Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz Reverse Tra.