P1260ETFS - NIKO-SEM

P1260ETFS N-Channel MOSFET

NIKO-SEM N-Channel Enhancement Mode P1260ETF:TO-220F P1260ETFS:TO-220FS Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 670mΩ ID 12A D G S ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed D.

Features

TERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC LIMITS UNIT MIN TYP MAX Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Gate Voltage Drain Current V(BR)DSS VGS(th) VGS = 0V, ID = 250A VDS = VGS, ID = 250A 600 V 2 2.8 4 IGSS VDS = 0V, VGS = ±30V ±100 nA VDS = 600V, VGS = 0V , TC = 25 °C IDSS VDS = 480V, VGS = 0V , TC = 100 °C 1 A 10 REV 1.0 G-17-4 1 NIKO-SEM N-Channel Enhancement Mode P1260ETF:TO-220F P1260ETFS:TO-220FS Field Effect Transistor Halogen-Free & Lead-Free Drain-Source On-State Resistance1 Forw.