VB20120SG-E3 |
Part Number | VB20120SG-E3 |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TO-220AB TMB... |
Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, IT... |
Document |
VB20120SG-E3 Data Sheet
PDF 213.68KB |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | VB20120SG-M3 |
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High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VB20120SG |
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3 | VB20120S |
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4 | VB20120S-E3 |
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5 | VB20120C |
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