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VB20120C-M3 |
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| Part Number | VB20120C-M3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com VB20120C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K 2 1 VB20120C PIN 1 K ... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 2 x 10 A 120 V 120 A 0.64 V 150 °C D2PAK (TO-263AB) Circuit configuration ... |
| Document |
 VB20120C-M3 Data Sheet
PDF 97.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VB20120C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | VB20120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | VB20120S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | VB20120S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | VB20120SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
|