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STPSC20H12-Y |
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| Part Number | STPSC20H12-Y |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a... |
| Features |
• AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK compliant Applications • On board charger Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off a... |
| Document |
 STPSC20H12-Y Data Sheet
PDF 462.67KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STPSC20H12 |
STMicroelectronics |
power Schottky silicon carbide diode |
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| 2 | STPSC20H12CWY |
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power Schottky silicon carbide diode |
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| 3 | STPSC20H065C |
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power Schottky silicon carbide diode |
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| 4 | STPSC20H065C-Y |
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Automotive 650V power Schottky silicon carbide diode |
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| 5 | STPSC20H065CWLY |
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Automotive 20A 650V power Schottky silicon carbide diode |
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