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FGD3050G2V |
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| Part Number | FGD3050G2V |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | FGD3050G2V EcoSPARK) 2 Ignition IGBT 300 mJ, 500 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Device... |
| Features |
• SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Device is Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER BVECS ESCIS25 Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) Self Clamping Inductive Switching Energy (Note 1) 500 20 300 V V mJ ESCIS150 Self Clamping Inductive Switch... |
| Document |
 FGD3050G2V Data Sheet
PDF 593.41KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGD3050G2 |
ON Semiconductor |
N-Channel IGBT |
|
| 2 | FGD3040G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 3 | FGD3040G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 4 | FGD3040G2-F085V |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | FGD3040G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|