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LMG3410R070 |
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| Part Number | LMG3410R070 |
| Manufacturer | Texas Instruments (https://www.ti.com/) |
| Description | The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advan... |
| Features |
•1 TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout – Adjustable Drive Strength for Switching Performance and EMI Control – Digital Fault Status Output Signal – Only +12 V Unregulated Supply Needed • Integrated Gate Driver – Zero Common Source Inductance – 20 ns Propagation Delay for MHz Operation – Process-tuned Gate Bias Voltage for Reliability – 25 to 100... |
| Document |
 LMG3410R070 Data Sheet
PDF 1.55MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LMG3410R050 |
Texas Instruments |
Integrated GaN Fet Power Stage |
|
| 2 | LMG3410R150 |
Texas Instruments |
GaN FET |
|
| 3 | LMG3411R050 |
Texas Instruments |
Integrated GaN Fet Power Stage |
|
| 4 | LMG3411R070 |
Texas Instruments |
GaN |
|
| 5 | LMG3411R150 |
Texas Instruments |
GaN FET |
|