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SSM6J511NU |
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| Part Number | SSM6J511NU |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J511NU 1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 13.5 mΩ (max) (@V... |
| Features |
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 13.5 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 10 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Pin Assignment
UDFN6B
SSM6J511NU
1.2.5.6 Drain 3. Gate 4. Source
©2016 Toshiba Corporation
1
Start of commercial production
2015-12
2017-04-18 Rev.3.0
SSM6J511NU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -12 V
Gate-source voltage
VGSS
±10
Drain current (DC)
(Note 1)
ID
-14 A
Drain current (pulsed)
(Note 1), (Note 2)
IDP
... |
| Document |
 SSM6J511NU Data Sheet
PDF 295.07KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM6J512NU |
Toshiba |
Silicon P-Channel MOSFET |
|
| 2 | SSM6J51TU |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 3 | SSM6J501NU |
Toshiba |
P-Channel MOSFET |
|
| 4 | SSM6J502NU |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 5 | SSM6J503NU |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|