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SSC8019GN2 |
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| Part Number | SSC8019GN2 |
| Manufacturer | AFSEMI |
| Description | This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device particularly suits low... |
| Features |
VDS -18V
VGS ±12V
RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5
ID -6.5A
Applications Load Switch Portable Devices DCDC conversion Charging Driver for Relay,Solenoid,Motor,LED etc. General Description This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline s... |
| Document |
 SSC8019GN2 Data Sheet
PDF 605.24KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SSC8013GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 2 | SSC8013GSB |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 3 | SSC8015GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 4 | SSC8020GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 5 | SSC8020GS8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|