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SSC8029GS6A |
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| Part Number | SSC8029GS6A |
| Manufacturer | AFSEMI |
| Description | This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device particularly suits low... |
| Features |
VDS -20V
VGS ±12V
RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5
ID -6.5A
Applications Load Switch Portable Devices DCDC conversion Charging Driver for Relay,Solenoid,Motor,LED etc. General Description This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline s... |
| Document |
 SSC8029GS6A Data Sheet
PDF 592.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSC8029GN2 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 2 | SSC8020GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 3 | SSC8020GS8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 4 | SSC8020GS9 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 5 | SSC8022GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|