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Si4953DY |
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| Part Number | Si4953DY |
| Manufacturer | TEMIC |
| Description | Si4953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) –30 rDS(on) (W) 0.053 @ VGS = –10 V 0.095 @ VGS = –4.5 V ID (A) "4.9 "3.6 SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 T... |
| Features |
se request FaxBack document #1235. A SPICE Model data sheet is available for this product (FaxBack document #5152).
Siliconix
1
S-47958—Rev. C, 15-Apr-96
Si4953DY
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb Dynamica
VGS(th) IGSS
IDSS ID(on) rDS(on)
gfs VSD
VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –30 V, VGS = 0 V VDS = –30 V, VGS = 0 V, TJ = 55_C VD... |
| Document |
 Si4953DY Data Sheet
PDF 52.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Si4953 |
Nanxin |
Dual P-Channel MOSFET |
|
| 2 | SI4953ADY |
Vishay Siliconix |
Dual P-Channel MOSFET |
|
| 3 | Si4952DY |
Vishay |
Dual N-Channel 25-V (D-S) MOSFET |
|
| 4 | SI4955DY |
Vishay Siliconix |
Assymetrical Dual P-Channel MOSFETs |
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| 5 | SI4900DY |
Vishay Siliconix |
N-Channel 60-V (D-S) MOSFET |
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