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Si6953DQ |
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| Part Number | Si6953DQ |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive... |
| Features |
• –1.9 A, –20 V, RDS(ON) = 170 mΩ @ VGS = –10 V. RDS(ON) = 320 mΩ @ VGS = –4.5V. • Extended VGSS range (±20V) for battery applications • Low gate charge • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG... |
| Document |
 Si6953DQ Data Sheet
PDF 102.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Si6953DQ |
Vishay |
Dual P-Channel 20-V (D-S) MOSFET |
|
| 2 | SI6954ADQ |
Vishay Siliconix |
N-Channel MOSFET |
|
| 3 | SI6954DQ |
Vishay Siliconix |
Dual N-Channel MOSFET |
|
| 4 | SI6955ADQ |
Vishay Siliconix |
Dual P-Channel 30-V (D-S) MOSFET |
|
| 5 | Si6956DQ |
Vishay |
Dual N-Channel 20-V (D-S) MOSFET |
|