SI6954DQ - Vishay Siliconix

SI6954DQ Dual N-Channel MOSFET

Si6954DQ Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.065 @ VGS = 10 V 0.095 @ VGS = 4.5 V ID (A) "3.9 "3.1 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 7 6 5 Si6954DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-So.

Features

CIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 3.9 A VGS = 4.5 V, ID = 3.1 A VDS = 15 V, ID = 3.9 A IS = 1.25 A, VGS = 0 V 15 0.043 0.075 7.0 0.77 1.2 0.065 0.095 W S V 1.0 "100 1 25 V nA mA A .