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2N739 |
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| Part Number | 2N739 |
| Manufacturer | Motorola |
| Description | 2N735 (SILICON) 2N736 2N739 2N740 NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications. CASE 22 (TO·18) Collector connected to case MAXIMUM R... |
| Features |
.0 Vde, IC = 0)
Symbol
2N735, 2N736 2N739, 2N740
2N735, 2N736 2N739, 2N740
BVCEO BVCBO BVEBO ICBO
lEBO
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAde, VCE = 5.0 Vde)
Collector-Emitter Saturation Voltage (IC = 10 mAde, IB = 2.0 mAde)
Base-Emitter Voltage (IC = 10 mAde, IB = 2.0 mAde)
2N735, 2N739 2N736, 2N740
hFE VCE(sat)
VBE
SMALL ·SIGNAL CHARACTERISTICS OUtput Capacitance (VCB = 5.0 Vde, IE = 0, f = 1.0 MHz) Input Impedance (IC = 5.0 mAde, VCE = 5.0 We, f = 1.0 kHz) Small-Signal Current Gain (IC = 5.0 mAde, VCE = 5.0 Vde, f = 1.0 Hz) Cob 2N735, 2N739 h1. e 2N736, 2N740 hfe 2N73... |
| Document |
 2N739 Data Sheet
PDF 86.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N731 |
Motorola |
NPN silicon transistor |
|
| 2 | 2N7336 |
Sames |
14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS |
|
| 3 | 2N735 |
Motorola |
NPN silicon annular transistors |
|
| 4 | 2N736 |
Motorola |
NPN silicon annular transistors |
|
| 5 | 2N7368 |
Microsemi Corporation |
NPN HIGH POWER SILICON TRANSISTOR |
|