VS5812AI |
Part Number | VS5812AI |
Manufacturer | Vanguard Semiconductor |
Description | Features N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Technology 100% Avalanche Tested Pb-free lead plating; RoHS compliant VS5812... |
Features |
N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Technology 100% Avalanche Tested Pb-free lead plating; RoHS compliant VS5812AI 55V/40A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 55 V 9.5 mΩ 13.5 mΩ 40 A TO-251 Part ID VS5812AI Package Type TO-251 Marking 5812AI Tape and reel information 75pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain curren... |
Document |
VS5812AI Data Sheet
PDF 425.58KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | VS5812AD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VS5812AE |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VS5812AP |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
4 | VS5812AS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
5 | VS5810AS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |