NCE01P18 |
Part Number | NCE01P18 |
Manufacturer | NCE Power Semiconductor |
Description | The NCE01P18 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VD... |
Features |
● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Application ● Power management in notebook computer ● Portable equipment and battery powered systems Schematic diagram Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE01P18 NCE01P18 TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unles... |
Document |
NCE01P18 Data Sheet
PDF 324.89KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NCE01P13 |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
2 | NCE01P13K |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
3 | NCE01P18D |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
4 | NCE01P18K |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
5 | NCE01P18L |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |