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NCE30P30K |
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| Part Number | NCE30P30K |
| Manufacturer | NCE Power Semiconductor |
| Description | The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V... |
| Features |
● VDS =-30V,ID =-30A RDS(ON) <18mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● High side switch for full bridge converter ● DC/DC converter for LCD display Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package NCE30P30K NCE30P30K TO-252-2L Reel Size - Tape width - ... |
| Document |
 NCE30P30K Data Sheet
PDF 423.17KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NCE30P30G |
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| 2 | NCE30P12S |
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| 3 | NCE30P15AS |
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P-Channel Enhancement Mode Power MOSFET |
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| 4 | NCE30P15S |
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P-Channel Enhancement Mode Power MOSFET |
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| 5 | NCE30P20Q |
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P-Channel Enhancement Mode Power MOSFET |
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