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BFP420 |
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| Part Number | BFP420 |
| Manufacturer | Siemens Semiconductor Group |
| Description | SIEGET® 25 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency... |
| Features |
soldering point to the pcb Semiconductor Group Semiconductor Group 11
Jul-14-1998 1998-11-01
BFP 420
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 20 mA, VCE = 4 V typ. 5 80 max. 6.5 200 35 150 V nA µA -
Unit
V(BR)CEO I CBO I EBO hFE
4.5 50
AC characteristics Transition frequency IC = 30 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = ... |
| Document |
 BFP420 Data Sheet
PDF 50.27KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BFP420 |
Infineon |
Surface mount wideband silicon NPN RF bipolar transistor |
|
| 2 | BFP420F |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 3 | BFP420W |
INCHANGE |
NPN Transistor |
|
| 4 | BFP405 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 5 | BFP405 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|