ME80N75AT - Matsuki

ME80N75AT N-Channel MOSFET

The ME80N75AT is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURES ● RDS(ON)≦10.5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-re.

Features

● RDS(ON)≦10.5mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management
● DC/DC Converter
● Load Switch (TO-220) Top View e Ordering Information: ME80N75AT (Pb-free) ME80N75AT-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Rating Unit Drain-Source Voltage VDS 75 V Gate-Source Voltage VGS ±25 V Continuous Drain Current
* TC=25℃ TC=70℃ ID 93 78 A Pulsed Drain Current IDM 372 A Maximum Power Dissipation TC=.