ME80N75AF-G - Matsuki

ME80N75AF-G N-Channel MOSFET

The ME80N75AF is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powe.

Features

● RDS(ON)≦10mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management
● DC/DC Converter
● Load Switch PIN CONFIGURATION (TO-220F) Top View
* The Ordering Information: ME80N75AF (Pb-free) ME80N75AF-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-So.