ME25N10T-G |
Part Number | ME25N10T-G |
Manufacturer | Matsuki |
Description | The ME25N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to mi... |
Features |
● RDS(ON)≦85mΩ@VGS=10V ● RDS(ON)≦105mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-220) Top View * The Ordering Information: ME25N10T (Pb-free) ME25N10T-G (Green product-Halogen free ) Absolute Maximum Rati... |
Document |
ME25N10T-G Data Sheet
PDF 0.96MB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | ME25N10T |
Matsuki |
N-Channel MOSFET | |
2 | ME25N10F |
Matsuki |
N-Channel MOSFET | |
3 | ME25N10F-G |
Matsuki |
N-Channel MOSFET | |
4 | ME25N15 |
Matsuki |
N-Channel MOSFET | |
5 | ME25N15-G |
Matsuki |
N-Channel MOSFET |