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BGA312 |
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| Part Number | BGA312 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P -1dB at 1.0 GHz • 3 dB-bandwidth: DC to 2.0 GHz 1 RF OUT/Bias 3 ... |
| Features |
0 Ω) Insertion power gain |S21| 2 ∆ |S 21|2 12 11 10 +-0.6 typ. max.
Unit
dB
f = 0.1 GHz f = 1 GHz f = 1.8 GHz
Insertion point gain flatness
f = 0.1 GHz to 0.6 GHz
Noise figure
NF
5.5 6 7 9 20 14 dBm dB
f = 0.1 GHz f = 1 GHz f = 2 GHz
1dB compression point
P-1dB RL in RL out
f = 1 GHz
Return loss input
f = 0.1 GHz to 2 GHz
Return loss output f = 0.1 GHz to 3 GHz
Typical biasing configuration
min. VCC = 7 V
R Bias
ΙD
RFC (optional) 4 3 2
EHA07313
Semiconductor Group Semiconductor Group 22
C Block
IN
1
C Block VD
OUT
RBias = VCC - VD / ID
VD = 4.7V
Sep-04-1998 1998-11-01
BGA 3... |
| Document |
 BGA312 Data Sheet
PDF 20.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BGA310 |
Siemens Semiconductor Group |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
|
| 2 | BGA318 |
Siemens Semiconductor Group |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
|
| 3 | BGA3012 |
NXP Semiconductors |
1GHz 12dB gain wideband amplifier MMIC |
|
| 4 | BGA3015 |
NXP |
1 GHz 15 dB gain wideband amplifier MMIC |
|
| 5 | BGA3018 |
NXP |
1 GHz 18 dB gain wideband amplifier MMIC |
|