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BST120 |
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| Part Number | BST120 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology. FEATURES • Very low RDS(on) • Direct interface to C-... |
| Features |
• Very low RDS(on) • Direct interface to C-MOS • High-speed switching • No second breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance −ID = 200 mA; −VGS = 10 V Transfer admittance −ID = 200 mA; −VDS = 15 V PINNING - SOT89 1 = source 2 = drain 3 = gate Yfs typ. RDS(on) −VDS ±VGSO −ID Ptot BST120 max. max. max. max. typ. max. 60 V 20 V 0,3 A 1 W 4,5 Ω 6 Ω 200 mS PIN CONFIGURATION handbook, halfpage d g 1 Bottom view 2 3 MAM354 s marking: LM Fig.1 Simplified outl... |
| Document |
 BST120 Data Sheet
PDF 57.68KB |
| Distributor | Stock | Price | Buy |
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