BSP120 |
Part Number | BSP120 |
Manufacturer | NXP (https://www.nxp.com/) |
Description | N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and li... |
Features |
• Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown QUICK REFERENCE DATA Drain-source voltage Drain-current (DC) Drain-source ON-resistance ID = 250 mA; VGS = 10 V Gate threshold voltage PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain Marking code BSP120 PIN CONFIGURATION RDS(on) VGS(th) typ. max. max. VDS ID max. max. BSP120 200 V 250 mA 7 Ω 12 Ω 2.8 V handbook, halfpage 4 d g 1 Top view 2 3 MAM054 s Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS... |
Document |
BSP120 Data Sheet
PDF 65.79KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | BSP121 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
2 | BSP122 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
3 | BSP123 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) | |
4 | BSP123 |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor | |
5 | BSP125 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) |