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BUZ101SL-4 |
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| Part Number | BUZ101SL-4 |
| Manufacturer | Siemens Semiconductor Group |
| Description | Preliminary data BUZ 101SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 101SL-4 VDS 55 V ID 4.1 A RDS(on) 0.075 Ω Packag... |
| Features |
ng point 1) Thermal resistance, junction - ambient 2) Values typ. max. tbd 62.5 K/W Unit
RthJS RthJA
-
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for Drain connection. PCB is vertical without blown air.
2) one channel active
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
55 1.6 0.1 10 0.06 2
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
1.2
VGS=VDS, ID = 30 µA
Zero gate voltage drain curr... |
| Document |
 BUZ101SL-4 Data Sheet
PDF 90.24KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUZ101SL |
Siemens Semiconductor Group |
Power Transistor |
|
| 2 | BUZ101S |
Siemens Semiconductor Group |
Power Transistor |
|
| 3 | BUZ101 |
Siemens |
Power Transistor |
|
| 4 | BUZ101 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | BUZ101L |
Siemens Semiconductor Group |
Power Transistor |
|