BUZ101L - Siemens Semiconductor Group

BUZ101L Power Transistor

BUZ 101L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Type BUZ 101L VDS 50 V ID 29 A RDS(on) 0.06 Ω Package TO-220 AB Ordering Code C67078-S1355-A2 Maximum Ratings Parameter Continuous dra.

Features

IN IEC 68-1 Symbol Values -55 ... + 175 -55 ... + 175 ≤ 1.5 ≤ 75 E 55 / 175 / 56 K/W Unit °C Tj Tstg RthJC RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.6 0.1 1 10 10 0.045 2 1 100 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = -40 °C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA µA nA Ω 0.06 VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C Gate-so.